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| process CPD83V switching diode high speed switching diode chip princip al device types cmpd914 cmpd4448 1n914 1n914b 1n4148 1n4448 1n4154 1n4454 cmpd2836 cmpd2838 cmpd7000 process epitaxial planar die size 11 x 11 mils die thickness 7.1 mils anode bonding pad area 3.3 x 3.3 mils top side metalization al - 30,000? back side metalization au.as - 13,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside cathode r0 (03- september 2004) gross die per 4 inch w afer 94,130
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